Electroluminescence and high-frequency voltage–capacitance methods were used to study Si/SiO2 structures obtained by thermal oxidation of KÉF-5 (100)Si wafers at 950C in wet O (oxide thickness 250nm). The structures were irradiated by 130keV Ar ions with doses in the range of 1013 to 3.2 x 1017/cm2. A correlation between the origin, properties, and formation mechanism of implantation-induced defects in the oxide layer was established, and a model of defect formation was proposed.

Formation of Defects in the Oxide Layer of Ion-Irradiated Si/SiO2 Structures. A.P.Baraban, L.V.Miloglyadova: Technical Physics, 2002, 47[5], 569-73