Irradiation of SiO2 with soft X-ray photons (hν > 100eV) produced a variety of defects, of which E1’ centers and neutral Si–Si bonds were mainly responsible for the dielectric response change. The thermal processes that modify the structures around the defect sites were investigated by in situ spectroscopic ellipsometry. Annealing the irradiated SiO2 film diminishes the number of defects which were attributed to E1’ centers by about half. The competing channels for annihilation of E1’ centers were the recovery of the Si–O–Si bonding configuration and, in the opposite direction, the decomposition of the material into volatile products until the network was completely restructured. The other half of the defects were converted to Si–Si bond units and precipitates as nanocrystalline particles of Si.

Competing Thermal Relaxation Processes in Response to Intrinsic Defects Produced by Exposing SiO2 to Synchrotron Radiation. H.Akazawa: Applied Surface Science, 2002, 190[1-4], 26-9