The results of the studies of the point defect generation kinetics in the Si–SiO2 system by means of electron paramagnetic resonance and nuclear magnetic resonance were presented. It was established that the electron paramagnetic resonance and nuclear magnetic resonance signal intensities change non-monotonously with oxide film thickness and the maximum of the electron paramagnetic resonance and minimum of the nuclear magnetic resonance signals occur at the same oxidation time. This could be connected with the competition between the generation and transformation of the point defects, the formation of Si–O bonds and strained bonds rupture in the Si–SiO2 system during the process of its formation. The defect structure of the Si–SiO2 system depended upon the point defect density in the initial wafers.

Interaction between Point Defects in the Si–SiO2 System during the Process of Formation. D.Kropman, T.Kärner, A.Samoson, I.Heinmaa, Ü.Ugaste, E.Mellikov: Nuclear Instruments and Methods in Physics Research Section B, 2002, 186[1-4], 78-82