The defect centers induced by ArF laser irradiation in Ge-doped SiO2 were investigated by the electron-spin resonance method. In order to observe formation and relaxation processes of the defects, step annealing was carried out after the irradiation at 77K. The thermally induced decay of the self-trapped hole and formation of the so-called Ge(2) centers were observed with increasing temperature. The result suggested that the holes were transferred from the self-trapped hole to the Ge(2).

Formation and Relaxation Processes of Photo-Induced Defects in a Ge-Doped SiO2 Glass. M.Yamaguchi, K.Saito, A.J.Ikushima: Physical Review B, 2002, 66[13], 132106 (4pp)