Hole-induced bulk and interface defect generation and breakdown in ultra-thin dioxide (2 and 3nm) were studied by using substrate hot-hole injection. The results showed that although these substrate hot holes were effective in creating electrically active damage in the dielectrics, these defects were very ineffective in causing breakdown as compared to those defects created by constant voltage tunneling stress. Identical to hole trapping in thicker oxides, substrate hot-hole defect generation was independent of electric field, decreased with decreasing thickness, and increased with decreasing temperature. The defect generation and breakdown of ultra-thin oxides by substrate hot-hole stress was significantly different from that observed for constant voltage tunneling stress. The results suggested that the degradation and breakdown of ultra-thin silicon dioxide could not be explained by the trapping of hot holes alone.

Defect Generation and Breakdown of Ultrathin Silicon Dioxide Induced by Substrate Hot-Hole Injection. E.M.Vogel, M.D.Edelstein, J.S.Suehle: Journal of Applied Physics, 2001, 90[5], 2338-46