Experiments were performed in which constant controlled levels of in-plane stress were applied in situ to oxidizing (111)Si substrates. Electron spin resonance measurements showed that the properties of inherently incorporated electrically active Pb defects at the (111)Si/SiO2 interface were affected. Tensile stresses decreased the number of Pb defects, while compressive stresses had the opposite effect. The results were in agreement with the generally accepted relationship between Pb generation and interfacial mismatch.

Influence of in situ Applied Stress during Thermal Oxidation of (111)Si on Pb Interface Defects. A.Stesmans, D.Pierreux, R.J.Jaccodine, M.T.Lin, T.J.Delph: Applied Physics Letters, 2003, 82[18], 3038-40