An experimental study of defects at the Si(111)/SiO2 interface following rapid thermal annealing in a N ambient at 1040C was presented. From a combined analysis using electron spin resonance and quasi-static capacitance–voltage characterization, the dominant defects observed at the Si(111)/SiO2 interface following inert-ambient rapid thermal annealing were identified unequivocally as being the Pb signal (interfacial Si3 ≡ Si·) for the oxidized Si(111) orientation. Furthermore, the Pb density (7.8 x 1012/cm2) deduced from electron spin resonance was in good agreement with the electrically active interface state density (6.7 x 1012/cm2) determined from analysis of the quasi-static capacitance–voltage response.

Analysis of Pb Centers at the Si(111)/SiO2 Interface Following Rapid Thermal Annealing. P.K.Hurley, A.Stesmans, V.V.Afanasev, B.J.O’Sullivan, E.O’Callaghan: Journal of Applied Physics, 2003, 93[7], 3971-3