Dangling-bond interface defects (Pb0,Pb1) were probed by means of electron spin resonance in samples of (100)Si with ultra-thin SiO2; grown in ozonated de-ionized water solution at room temperature. After photo-desorption of passivating H, Pb0 appeared with at densities of up to 5 x 1012/cm2. This value was 5 times larger than that normally attained by high-temperature thermal growth. Thus standard quality thermal Si/SiO2 interface properties, as exposed by the Pb0-type defects criterion (interface traps), were not obtained by oxidation in ozonated water solutions at room temperature. The interface quality could be upgraded by additional thermal treatments. Standard quality was still not attained after vacuum annealing at 600C.

Pb-Type Interface Defects in (100)Si/SiO2 Structures Grown in Ozonated Water Solution. D.Pierreux, A.Stesmans: Journal of Applied Physics, 2003, 93[7], 4331-3