The generation of interface defects and positive charge during the injection of electrons in p-Si/SiO2/ZrO2/TiN structures was investigated. The kinetics of generation of both types

of defect were very similar. A model was proposed to explain the interface defect generation, based on the de-passivation of trivalent Si dangling bonds (Si3≡SiH → Si3≡Si·) at the (100)Si/SiO2 interface by the injected electrons. A Gaussian spread for the activation energy Ed related to the dissociation of the Si–H bond was included in this model. Comparison with experimental results reveals that the mean value of the activation energy Edi decreased linearly with the electric field Eox across the SiO2 layer. This behavior was attributed to the alignment of the Si–H dipole moment with respect to Eox, which favors dissociation of the Si–H bond. The hint of a correlation between the interface defect and positive charge generation suggested that the positively charged centers might be H-induced over-coordinated O centers.

Model for Interface Defect and Positive Charge Generation in Ultra-Thin SiO2/ZrO2 Gate Dielectric Stacks. M.Houssa, J.L.Autran, A.Stesmans, M.M.Heyns: Applied Physics Letters, 2002, 81[4], 709-11

 Table 2

 Diffusion of 22Na in P0798 (SiO2-14.2B2O3-5Al2O3-3Li2O-3CaO-3wt%ZnO) Glass

 below the Glass Transition Tempertature