The KTiOPO4 samples were implanted with Bi+ ions having energies ranging from 100 to 350keV, in increments of 50keV. The depth distribution and diffusion behavior of implanted Bi+ in KTiOPO4 were investigated by using normal- and oblique-incidence Rutherford back-scattering. The results showed that the maximum difference between experimental and calculated values of the mean projected range was less than 22%. After annealing, the redistribution of implanted Bi+ ions in the KTiOPO4 was found not to obey Fick’s law, and there was segregation to the surface during annealing at 700C. After annealing (800C, 0.5h), most of the segregated Bi+ ions had evaporated, and the distribution of the remaining Bi+ ions became flat.

Depth Distribution and Diffusion Behavior of Implanted Bi+ Ions into KTiOPO4. K.M.Wang, H.Hu, F.Lu, F.Chen, J.H.Zhang, X.D.Liu, J.T.Liu, Y.G.Liu: Journal of Vacuum Science & Technology A, 2002, 20[2], 362-5