A new concept of epitaxy named micro-channel epitaxy was presented. In micro-channel epitaxy, lattice information was transferred through narrow micro-channels while the transfer of defect information was prevented by the presence of amorphous film at the epitaxial layer–substrate interface. Two types of micro-channel epitaxy, vertical and horizontal micro-channel epitaxy, were demonstrated. Special attention was paid here to horizontal micro-channel epitaxy. This was composed of selective area epitaxy in the narrow micro-channel and successive epitaxial lateral growth. It was demonstrated that flat micro-channel epitaxy layers could be successfully obtained. Although dislocations propagate through the micro-channel into the grown layer, wide dislocation-free regions were obtained outside this dislocated area. Micro-channel epitaxy with high width-to-thickness ratio was successfully achieved by molecular beam epitaxy by sending molecular beams with a low angle to the substrate surface.

Microchannel Epitaxy - an Overview. T.Nishinaga: Journal of Crystal Growth, 2002, 237-239[2], 1410-7