A modified defect model was presented for pure and chemically substituted quadruple and quintuple pure perovskite layered cuprates, using data from the Jonker (thermopower vs ln conductivity) and Brouwer (log conductivity vs log pO2) analyses. The closely matched in-plane bond lengths of the blocking and the active layers in these structures promote ionic compensation rather than electronic compensation upon aliovalent p-type doping. A comprehensive defect model that took account of all of the major defect species in an ionically compensated quadruple or quintuple perovskite provided a better means for understanding the electrical behavior of these novel materials. The presented model allows for the calculation of effective dopant and the O interstitial concentrations in these materials.

Defect Analysis of Ionically Compensated Quadruple and Quintuple Perovskite Layered Cuprates with Ti Blocking Layers. N.Mansourian-Hadavi, T.O.Mason, D.Ko, K.R.Poeppelmeier: Journal of Solid State Chemistry, 2002, 164[2], 188-200