It was recalled that the radiation resistance of ceramic materials under neutron irradiation was determined by the kinetics of accumulation of point defects in the matrix and point defect cluster formation (dislocation loops, voids, etc.). The mechanisms of dislocation loop growth in ceramic materials were investigated here. For this aim a theoretical model was suggested for the description of the kinetics of point defect accumulation in the matrix taking into account the charge state of the point defects and the effect of an electric field on diffusion migration process of charged point defects. A self-consistent system of kinetic equations describing the generation of electrical fields near to dislocation loops and diffusion migration of charged point defects in elastic and electrical fields was formulated. Solution of the kinetic equations permitted the calculation of the growth rate of dislocation loops in ceramic materials under irradiation; taking account of the charge state of the point defects and the effect of electric and elastic stress fields, near to dislocation loops, upon diffusion processes.

Growth Kinetics of Dislocation Loops in Irradiated Ceramic Materials. A.I.Ryazanov, C.Kinoshita: Nuclear Instruments and Methods in Physics Research Section B, 2002, 191[1-4], 65-73