A 1-dimensional H atom model for the continuum planar potential due to a single plane was applied to the case of planar channelled electrons in order to estimate the corresponding bound states in the potential well. The effects of extended defects, such as stacking faults and dislocations, upon transitions among the various levels were studied by calculating the transition probabilities at the faulted region. That is, at the stacking-fault boundary for the case of stacking faults and distorted region of the dislocation.

Channelling Radiation from Relativistic Electrons - Study of Stacking Faults and Dislocations. P.Pathak, L.N.S.Prakash Goteti, S.V.S.Nageswara Rao: Nuclear Instruments and Methods in Physics Research B, 2002, 193[1-4], 188-91