It was noted that the planar density of coincidence sites appeared to be high along observed boundary planes for the Σ = 3 and 9 [110] tilt grain boundaries. The polarity in the grains on each side of the tilt grain boundaries was confirmed by using direct or indirect methods. The results indicated that a lower number of anti-site type bonds occurred along the boundaries, as compared to when the polarity of one grain was reversed. Based upon the high-resolution transmission electron microscopic analysis of various symmetrical and asymmetrical Σ = 3 and 9 [110] tilt grain boundaries, models for the atomic structures of these boundaries were developed for the first time. Particular atomic arrangements made up the structural units of these boundaries.

Structural Features of Σ = 3 and 9, [110] GaAs Tilt Grain Boundaries. N.H.Cho, C.B.Carter: Japanese Journal of Applied Physics - 1, 2001, 40[7], 4458-65