Five electron traps were detected successfully in heavily Si-doped GaAs and AlxGa1–xAs of low Al content, with a Si concentration of above 1019/cm3, by using deep level transient spectroscopy. The junctions were grown by using liquid-phase epitaxy, and were strongly compensated. The traps were investigated as functions of the Si concentration and AlAs mole fraction. The traps were analyzed with regard to their spectra and concentration, in contrast to previous results which had used point defects in GaAs and AlGaAs. The traps exhibited distinctive features which could be attributed to strongly Si-compensated crystals. Three traps were confirmed to be DX centers.

Deep Levels in Strongly Si-Compensated GaAs and AlGaAs. T.Sato, T.Ishiwatari: Journal of Applied Physics, 2002, 91[8], 5158-62