Time-resolved photoluminescence, with a 1 to 2μm spatial resolution, was used to characterize deep centre distributions in semi-insulating GaAs:Fe epitaxial layers which had been re-grown by hydride vapour phase epitaxy around etched GaAs mesas and GaAs/AlGaAs quantum-well laser structures. Both Fe ions and As antisite defects had to be considered as possible carrier recombination centres. The numbers of ionized Fe and EL2 centres exhibited increases at the mesa interfaces.

Time-Resolved Micro-Photoluminescence Studies of Deep Level Distribution in Selectively Regrown GaInP:Fe and GaAs:Fe. A.Gaarder, S.Marcinkevicius, C.A.Barrios, S.Lourdudoss: Semiconductor Science and Technology, 2002, 17[2], 129-34