A theoretical and experimental study was made of the photo-dissociation mechanisms of H-passivated n-type and p-type dopants in GaAs. Photo-induced dissociation of the SiGa¯H complex was observed for relatively low photon energies (3.48eV), whereas the photo-dissociation of CAs¯H was not observed for photon energies of up to 5.58eV. This fundamental difference in the photo-dissociation behaviors of the 2 dopants was explained in terms of the localized excitation energies about the Si¯H and C¯H bonds.

Photo-Dissociation of Hydrogen Passivated Dopants in Gallium Arsenide. L.Tong, J.A.Larsson, M.Nolan, M.Murtagh, J.C.Greer, M.Barbé, F.Bailly, J.Chevallier, F.S.Silvestre, D.Loridant-Bernard, E.Constant, F.M.Constant: Nuclear Instruments and Methods in Physics Research B, 2002, 186[1-4], 234-9