A technique was described, for characterizing deep defects in low-temperature grown GaAs, which was based upon a thin low-temperature GaAs layer embedded in the intrinsic zone of a pin diode. Steady-state and time-dependent measurements of the n-channel conductance were performed, and this yielded information concerning the density, activation energy and characteristic time constants of the deep defects.

Optical and Electrical Spectroscopy of Defects in Low Temperature Grown GaAs. C.Steen, P.Kiesel, S.Tautz, S.Krämer, S.Soubatch, S.Malzer, G.H.Döhler: Materials Science and Engineering B, 2002, 88[2-3], 191-4