Photoluminescence, deep-level transient spectroscopic and X-ray photo-electron spectroscopic techniques were used to investigate the mechanisms of impurity-free

disordering, in GaAs-based structures, using doped spun-on silica layers. It was demonstrated that VGa was efficiently converted into As-antisite, AsGa, related defects (EL2-type defects) when the GaAs layer was under a compressive stress. It was proposed that the efficient formation of EL2-type defects reduced the efficiency of the impurity-free interdiffusion of GaAs/AlGaAs quantum wells.

Impurity-Free Disordering Mechanisms in GaAs-Based Structures using Doped Spin-On Silica Layers. P.N.K.Deenapanray, B.Gong, R.N.Lamb, A.Martin, L.Fu, H.H.Tan, C.Jagadish: Applied Physics Letters, 2002, 80[23], 4351-3