It was recalled that the positron annihilation lifetime technique could be applied to the study of temperature-dependent deep-level transients in semiconductors. Defect levels in the band-gap could be determined, as they were by using conventional deep-level transient spectroscopy. The advantage of positron annihilation over conventional deep level transient spectroscopy was that it could extract further microstructural information on deep-level defects; such as whether a deep-level defect was vacancy-related or not. A demonstration of an EL2 defect level transient study in GaAs was given, and an EL2 level of 0.82eV was deduced from a standard Arrhenius analysis.

Application of Positron Annihilation Lifetime Technique to the Study of Deep Level Transients in Semiconductors. A.H.Deng, Y.Y.Shan, S.Fung, C.D.Beling: Journal of Applied Physics, 2002, 91[6], 3931-3