The structure of the (111)B (√19 x √19) R23.4° surface reconstruction was determined by using X-ray photo-electron spectroscopy and scanning tunnelling microscopy. The structure was characterized by the 6-fold As crown first found by Biegelsen et al. It was also found that both As and Ga atoms occurred in antisite positions in the top bilayer, and perhaps in underlying layers as well. These antisite atoms were suggested to enhance the island formation which was involved in the epitaxial-growth self-assembling nanostructures, and to interfere with the layer-by-layer growth that characterized homo-epitaxy and hetero-epitaxy on most GaAs surfaces. Contrary to several earlier structures which had been proposed for this reconstruction, it was proposed here that all of the As (Ga) dangling orbitals were filled (empty); consistent with the electron counting rule.

GaAs(111)B(√19 x √19)R23.4° Surface Reconstruction. H.H.Farrell, J.Lu, B.D.Schultz, A.B.Denison, C.J.Palmstrøm: Journal of Vacuum Science and Technology B, 2001, 19[4], 1597-605