A model was presented which took account of the interface-defect contribution to the binding energy of charged excitons (trions). Gaussian defect potentials and a one-particle Gaussian basis set were used. All of the Hamiltonian defect terms were calculated analytically for s-like trial wave functions. The dependence of the binding energy, and of the trion size, upon the quantum-well width and defect size were investigated by using a variational method for GaAs/Al0.3Ga0.7As quantum wells. It was shown that, even in the case of strictly structural defects, the trion was more strongly affected than was the exciton.

Binding Energy of Charged Excitons Bound to Interface Defects of Semiconductor Quantum Wells. L.C.O.Dacal, R.Ferreira, G.Bastard, J.A.Brum: Physical Review B, 2002, 65[11], 115325 (5pp)