The effects of H irradiation on the optical properties of GaAs1-yNy epilayers in the dilute N limit were studied. H irradiation leads to a progressive and finally complete passivation

of bound exciton levels related to N complexes. A further thermal annealing restores the optical properties that the samples had before hydrogenation. These results were accounted for by the formation of N-H complexes with different bond strengths and dissociation energies.

Nitrogen-Related Complexes in Ga(AsN) and their Interaction with Hydrogen. M.Bissiri, V.Gaspari, G.Baldassarri Höger von Högersthal, F.Ranalli, A.Polimeni, M.Capizzi, A.Frova, M.Fischer, M.Reinhardt, A.Forchel: Physica Status Solidi A, 2002, 190[3], 651-4