It was reported that a lattice-matched and dislocation-free GaAsyP1–x–yNx/GaP0.98N0.02 quantum-well structure could be grown on a Si substrate. A two-dimensional growth mode was maintained during growth of all the layers. It was confirmed that the quantum-well structure was lattice-matched to the Si substrate from the lattice constant measured by X-ray diffraction. A cross-sectional image taken by transmission electron microscopy revealed that no threading dislocations or misfit dislocations were observed at the quantum-well structure.

Dislocation-Free GaAsyP1–x–yNx/GaP0.98N0.02 Quantum-Well Structure Lattice- Matched to a Si Substrate. Y.Fujimoto, H.Yonezu, A.Utsumi, K.Momose, Y.Furukawa: Applied Physics Letters, 2001, 79[9], 1306-8