Layers of In0.35Ga0.65As were grown onto GaAs(100) substrates by means of metal-organic vapor-phase epitaxy, using graded buffer layers. Substrates of GaAs(100), misoriented toward (111)A and (111)B, and exactly oriented GaAs(100) substrates, were used. The surface morphology of the InGaAs layers depended strongly upon the substrate misorientation direction. The lowest root-mean-square surface roughness was obtained for layers on substrates misoriented toward (111)A under optimum conditions. Strain relaxation in the InGaAs layers was affected by the substrate misorientation. The threading dislocation densities were equal to 6.4 x 106, 3.6 x 106 and 2.0 x 106/cm2 in InGaAs layers on exactly oriented substrates and on substrates misoriented towards (111)A and (111)B, respectively.

Epitaxial Growth of InGaAs on Misoriented GaAs(100) Substrate by Metal-Organic Vapor Phase Epitaxy. Y.Takano, M.Masuda, K.Kobayashi, K.Kuwahara, S.Fuke, S.Shirakata: Journal of Crystal Growth, 2002, 236[1-3], 31-6