The influence of the In content upon the accumulation of structural damage in InxGa1–xN films (where x was 0 to 0.2) under heavy-ion bombardment was studied by combining Rutherford back-scattering/channelling spectrometry with transmission electron microscopy. The results showed that an increase in the In concentration strongly suppressed dynamic annealing processes, and therefore enhanced the build-up of stable lattice disorder in InGaN under ion bombardment.

Implantation-Produced Structural Damage in InxGa1–xN. S.O.Kucheyev, J.S.Williams, J.Zou, S.J.Pearton, Y.Nakagawa: Applied Physics Letters, 2001, 79[5], 602-4