Deep hole traps created by the γ-irradiation of Al/GaInP Schottky diodes, grown via metalorganic chemical vapor deposition, were studied by using deep level transient spectroscopy. Two distinct deep hole traps, A and B, were observed in the irradiated samples. According to an analysis of trap concentrations in various samples, the A trap was identified as being a bulk defect located at 0.29eV above the valance band. The B trap was an interface state which originated from the junctions of Al/Mg-doped GaInP contacts.

Deep Hole Traps Created by Gamma-Ray Irradiation of GaInP. W.J.Sung, T.Y.Liu, S.L.Yang, K.F.Huang, T.Y.Tseng, F.I.Chou, Y.Y.Wei: Japanese Journal of Applied Physics - 1, 2001, 40[12], 6807-8