Deep electron traps, created by the γ-irradiation of Au/GaInP Schottky diodes grown by metalorganic chemical vapor deposition, were studied by means of deep level transient spectroscopy. Three distinct deep electron traps (G1, G2, G3) were observed in irradiated samples. According to an analysis of the trap properties in various samples, G1 was identified as being a bulk defect which was located at 0.13eV below the conduction band.

The G2 and G3 traps were interface states that originated from the junctions of Au/Te-doped GaInP contacts.

Gamma-Ray Induced Deep Electron Traps in GaInP. W.J.Sung, T.Y.Liu, S.L.Yang, K.F.Huang, T.Y.Tseng, F.I.Chou, Y.Y.Wei, Y.R.Wu: Japanese Journal of Applied Physics - 1, 2001, 40[9A], 5306-7