Metalorganic vapour-phase epitaxially-grown layers were exposed to a D radio-frequency plasma. It was shown that, in a certain plasma configuration, D diffused significantly within the samples; if they were Mg-doped. On the other hand, in non-intentionally doped

samples (under equivalent plasma conditions), the D accumulated just below the surface. It was also shown that, in GaN:Mg, the diffusing D species interacted with native H and were responsible for its redistribution within the layer.

Deuterium Diffusion in Mg-Doped GaN Layers Grown by Metalorganic Vapour Phase Epitaxy. B.Theys, Z.Teukam, F.Jomard, P.de Mierry, A.Y.Polyakov, M.Barbé: Semiconductor Science and Technology, 2001, 16[9], L53-6