The distributions of threading dislocations in epitaxial lateral overgrowth GaN prepared by hydride vapor-phase epitaxy were investigated. Two types of carrier gas (N, H+N) were used during the vapor-phase epitaxy in order to change the facet structure of the epitaxial lateral overgrowth layer. The results of cathodoluminescence mapping and HCl vapor-phase etching revealed lower threading dislocation densities in the epitaxial lateral overgrowth layers grown using a H+N mixed carrier gas than in those grown using N carrier gas.