High-resolution X-ray diffraction was used to analyze the types and densities of threading dislocations in (00•1)-oriented epitaxial films. The photoluminescence and carrier mobilities of the films were measured at room temperature. It was found that the intensities of the band-edge (3.42eV) peak and yellow luminescence were strongly related to the threading dislocation density of the film. However, different types of dislocation had different relationships with the intensities of photoluminescence and yellow luminescence. A fundamental correlation was found, not only between the interaction of

edge-type and screw-type dislocations and the carrier mobility, but also between the interaction and the intensities of the band-edge peak and the yellow luminescence.

Influence of Different Types of Threading Dislocations on the Carrier Mobility and Photoluminescence in Epitaxial GaN. J.Y.Shi, L.P.Yu, Y.Z.Wang, G.Y.Zhang, H.Zhang: Applied Physics Letters, 2002, 80[13], 2293-5