Transmission electron microscopic observations were used to analyze the behavior of dislocations in epitaxially lateral overgrown GaN. Particular attention was paid to the effect of the mask size. In the case of epitaxially lateral overgrown GaN grown on a mask with W/T = 5/5μm, dislocations lying on (00•1), or horizontal dislocations were formed. Here, W/T represented the sizes of window and terrace. In the case where W/T = 2/2μm, the number of horizontal dislocations was small. This implied that these horizontal dislocations were generated by a multiplication step such as the Frank-Read mechanism. A network of horizontal dislocations was observed near to the sharp point of a void, on the mask terrace, where internal stresses were concentrated.

Formation of Horizontal Dislocations in Epitaxially Lateral Overgrown (ELO) GaN. S.Nishimoto, K.Horibuchi, K.Oki, N.Kuwano, H.Miyake, K.Hiramatsu: Physica Status Solidi A, 2001, 188[2], 739-42