The scattering of carriers due to dislocations was studied. Unlike semiconductors such as Si or GaAs, the main scattering mechanism for undoped or lightly-doped samples was dislocation scattering, rather than ionized impurity scattering. It was found that, for GaN samples in the dislocation scattering region, the mobility was a function of the dislocation density and free carrier concentration. Temperature-variation mobility plots also indicated that a T3/2 dependence component was present, which was also attributed to dislocations.

Dislocation Scattering in n-GaN. H.W.Choi, J.Zhang, S.J.Chua: Materials Science in Semiconductor Processing, 2001, 4[6], 567-70