Structural transformations of inversion domain boundaries on prismatic planes in epitaxial wurtzite GaN were observed at their intersections with stacking faults on the basal plane. High-resolution electron microscopic observations showed that, following the growth direction, the inversion domain boundaries were transformed from a low-energy electrically non-active type to the high-energy electrically active Holt type. By using the topological theory of interfacial defects, it was proved that these transitions were due to the interaction of 2 distinct planar defects and could be attributed to the differing growth rates of adjacent domains of inverse polarity. The junction lines of the planar defects were characterized by using the circuit mapping technique; as formulated mathematically for multi-component crystal systems. It was found that these lines exhibited a partial dislocation nature.

Structural Transition of Inversion Domain Boundaries through Interactions with stacking Faults in Epitaxial GaN. G.P.Dimitrakopulos, P.Komninou, J.Kioseoglou, T.Kehagias, E.Sarigiannidou, A.Georgakilas, G.Nouet, T.Karakostas: Physical Review B, 2001, 64[24], 245325 (12pp)