Neutron irradiation effects upon Au/sputtered-GaN Schottky barrier photodetectors, grown on Si(111), were investigated. The data showed that the optimum fluence (1013/cm2) of neutron irradiation could not only promote crystallinity of the GaN films, but could also effectively repress the occurrence of N–vacancy related traps. It was suggested that these were the main factors which contributed to the superior rectifying current-voltage characteristics and enhanced spectral response of Au/sputtered-GaN Schottky detectors.

Neutron Irradiation Effects on Visible-Blind Au/GaN Schottky Barrier Detectors Grown on Si(111). C.W.Wang: Applied Physics Letters, 2002, 80[9], 1568-70