The characteristic effects, of doping with impurities such as Si, Ge, Se, O, Mg, Be and Zn, upon the electrical and optical properties of GaN-based materials were reviewed. The roles played by unintentionally introduced impurities (C, H, O) and grown-in defects (vacancies, antisites) were also considered. The doping process during the epitaxial growth of GaN, AlGaN, InGaN, and their superlattice structures was described. Doping using diffusion and ion implantation techniques was also considered. A p-n junction was successfully fabricated via Si implantation into p-type GaN.

The Doping Process and Dopant Characteristics of GaN. J.K.Sheu, G.C.Chi: Journal of Physics - Condensed Matter, 2002, 14[22], R657-702