The defect structure of unintentionally doped and deliberately Se-doped n-type material was investigated. The Se was incorporated into the films during vapor-phase epitaxial growth. Both the nominally undoped and Se-doped n-type films were highly compensated; as deduced from Hall-effect measurements and photoluminescence spectroscopy. It was also found that compensation by acceptors increased with increasing Se concentration. On the basis of these results, and theoretical calculations, a defect compensation model was developed for n-type GaN.

Compensation Model for n-Type GaN. G.C.Yi, W.Park: Japanese Journal of Applied Physics - 1, 2001, 40[11], 6243-7