Monocrystalline wurtzite-type GaN(00•1) films were grown, using conventional methods, onto high-temperature AlN(00•1) buffer layers which had previously been deposited onto 3C-SiC(111)/Si(111) substrates by using metalorganic vapor-phase epitaxy. The formation of the 3C-SiC transition layer involved a carburization step and the subsequent deposition of epitaxial 3C-SiC(111) onto the Si(111) surface by using atmospheric-pressure chemical vapor deposition. Similar films, but with significantly reduced dislocation densities, were grown using pendeo-epitaxy from the (11•0) side-walls of Si3N4-masked raised rectangular and [1¯1•0]-oriented GaN stripes; etched from films conventionally grown onto similarly prepared Si-based multilayer substrates. The full-

width at half-maximum of the (00•2) X-ray diffraction peak of the conventionally grown GaN was 1443arcsec. The full-width at half-maximum of the photoluminescence spectra for the near band-edge emission on these films was 0.019eV. Tilting of 0.2° in the coalesced pendeo-epitaxially-grown GaN epilayers was confined to areas of lateral overgrowth over the masks. No tilting was observed in material above the trenches. A strong low-temperature photoluminescence band-edge peak at 3.456eV, with a full-width at half-maximum of 0.017eV in the pendeo-epitaxial films was comparable to that observed in pendeo-epitaxial GaN films grown onto AlN/6H-SiC(00•1) substrates.

Conventional and Pendeo-Epitaxial Growth of GaN(00•1) Thin Films on Si(111) Substrates. R.F.Davis, T.Gehrke, K.J.Linthicum, E.Preble, P.Rajagopal, C.Ronning, C.Zorman, M.Mehregany: Journal of Crystal Growth, 2001, 231[3], 335-41