The kinetic Monte Carlo technique was used to reproduce features of 3-dimensional growth which were relevant to the case of GaSb/GaAs(001). It was shown that step-edges could act as preferential sites for the nucleation of misfit dislocations. It was observed that their nucleation was anisotropic with respect to the [110] and [1¯10] orientations of the step edges. By introducing second-nearest neighbour interactions, it was shown that kinks acted as preferential sites for island nucleation.

Role of Substrate Imperfections on Island Nucleation and Defect Formation - Case of GaSb/GaAs(001). M.D.Rouhani, H.Kassem, J.Dalla Torre, G.Landa, A.Rocher, D.Estève: Materials Science and Engineering B, 2002, 88[2-3], 181-5