It was recalled that previous perturbed angular correlation studies of crystalline Ge substrates, using radioactive 111In probes, had established the presence of 2 distinct defect configurations following electron or ion bombardment. The defects were tentatively identified as being In-vacancy and In-interstitial configurations, but a definite attribution was still lacking. In the present work, they were studied as functions of ion dose, background dopant and dopant concentration. It was found that the relative fractions of the defective configurations were generally insensitive to the dopant concentration, and therefore did not exhibit any significant Fermi-level dependence. The results suggested that the formation of an In-V complex was not the result of elastic interactions between an In-acceptor and a neutral vacancy.

Irradiation-Induced Defect Configurations in Ge Substrates Characterised with Perturbed Angular Correlation. C.J.Glover, A.P.Byrne, M.C.Ridgway: Nuclear Instruments and Methods in Physics Research B, 2001, 175-177, 51-5