The interdiffusion effects on the band alignment of the GeSi dots embedded in Si matrix were studied by temperature- and excitation-power-dependent photoluminescence measurements. A different power-dependent behavior of the photoluminescence for the as-grown and the annealed samples was observed. It was suggested that the band alignments of the dots changed from type-II to type-I after annealing due to Ge/Si interdiffusion. The decrease of the valence band offset, which was also induced by Ge/Si interdiffusion, was observed from the temperature-dependent photoluminescence measurements.

Effects of Interdiffusion on the Band Alignment of GeSi Dots. J.Wan, Y.H.Luo, Z.M.Jiang, G.Jin, J.L.Liu, K.L.Wang, X.Z.Liao, J.Zou: Applied Physics Letters, 2001, 79[13], 1980-2