A study was focussed upon understanding the mechanisms of ion-beam milling-induced p-to-n conversion in extrinsically (As or Sb) doped p-type Hg1-xCdxTe, where x was about 0.2. The modelling was based upon a quasi-chemical approach and the super-fast Hg interstitial diffusion which had explained a similar conversion in Hg-vacancy doped p-type Hg1-xCdxTe. In an acceptor-doped material a donor was generated due to the formation of a complex (of an interstitial Hg atom and an As or Sb atom located at the Te site). This model provided a reasonably good fit to the experimental results obtained for

As- and Sb-doped Hg1-xCdxTe epitaxial layers, where the electron concentration in the converted n-layer corresponded to the concentration of p-type dopants. A differing efficiency of conductivity conversion, which was observed for As- and Sb-doped samples was explained in terms of the differing enthalpies of complex formation which were calculated for AsTe-HgI and SbTe-HgI pairs.

Defect Structure Rebuilding by Ion Beam Milling of As and Sb Doped p-Hg1-xCdxTe. N.N.Berchenko, V.V.Bogoboyashchiy, I.I.Izhnin, A.P.Vlasov: Physica Status Solidi B, 2002, 229[1], 279-82