It was shown here that the incorporation of atomic H into InAsN/InGaAs quantum wells could effectively passivate defects and lead to enhancement of photoluminescence intensity near the band edge. After hydrogenation, the change of the optical properties was quite different from that of the annealing with N treatment. For instance, the linewidth became wider after hydrogenation, while the linewidth was narrower after N annealing. Through a detailed study of the photoluminescence spectra, it was shown that the passivation of defect bonds was the main reason for the improved optical behavior for hydrogenation, while the interdiffusion was responsible for the change after N annealing.

Photoluminescence Study of Hydrogen Passivation in InAs1–xNx/InGaAs Single-Quantum Well on InP. Y.Y.Ke, M.H.Ya, Y.F.Chen, J.S.Wang, H.H.Lin: Applied Physics Letters, 2002, 80[19], 3539-41