InGaAs layers with an In composition of 0.57 were grown with metal-organic vapor phase epitaxy using graded buffer layers on exactly oriented and misoriented GaAs(100) substrates. No mirror-like surface was obtained at growth temperatures between 570 and 630C. A mirror-like surface was achieved at a growth temperature of 450C. The threading dislocation density in the layer grown at 450C on the GaAs substrate misoriented toward (111)A was determined to be 107/cm2 using transmission electron microscopy. Photoluminescence results also confirmed that the density of recombination centers in layers grown at 450C was low. Low-temperature growth with metal-organic vapor phase epitaxy was found to be effective in InGaAs layers on GaAs substrates with high In composition above 0.4.

Low Temperature Growth of InGaAs Layers on Misoriented GaAs Substrates by Metalorganic Vapor Phase Epitaxy. Y.Takano, K.Kobayashi, H.Iwahori, N.Kuroyanagi, K.Kuwahara, S.Fuke, S.Shirakata: Applied Physics Letters, 2002, 80[12], 2054-6