A new method was presented for growing InxGa1-xAs strained layers directly, instead of using graded buffer layers, onto misoriented GaAs (100) substrates offset by 10° towards (111)A. The method maintained the low numbers of interface dislocations, high crystal quality and uniform mirror-like surfaces of layers grown by metalorganic chemical vapor deposition. Large lattice defects which existed between InxGa1-xAs and GaAs layers, and led to numerous interface dislocations and rough surface areas, were suppressed successfully by accurately controlling the growth temperature, growth rate, and group-III and group-V partial pressures; using a V/III ratio of at least 91. The surface roughness was less than 1nm, as measured by means of atomic force microscopy. Lower densities of interface dislocations could be observed by transmission electron microscopy. A high

crystal quality, as compared with that in previous studies, was measured by X-ray diffractometry.

Direct Growth of High-Quality InxGa1-xAs Strained Layers on Misoriented GaAs Substrates Grown by Metalorganic Chemical Vapor Deposition. C.I.Liao, K.F.Yarn, C.L.Lin, Y.H.Wang: Japanese Journal of Applied Physics - 1, 2002, 41[3A], 1247-52