To gain insight into the N-related defects of InGaAsN, N vibrational mode spectra, Hall mobilities, and minority carrier diffusion lengths were examined for InGaAsN (1.1eV band gap) grown by molecular beam epitaxy. Annealing promotes the formation of In-N bonding, and lateral carrier transport was limited by large scale (greater than the mean free path) material inhomogeneities. Comparing solar cell quantum efficiencies with earlier results for devices grown by metalorganic chemical vapor deposition, significant electron diffusion was found in the molecular beam epitaxial material (reversed from the hole diffusion in metalorganic chemical vapor deposited material), and minority carrier diffusion in InGaAsN cannot be explained by a so-called universal N-related defect.

Minority Carrier Diffusion and Defects in InGaAsN Grown by Molecular Beam Epitaxy. S.R.Kurtz, J.F.Klem, A.A.Allerman, R.M.Sieg, C.H.Seager, E.D.Jones: Applied Physics Letters, 2002, 80[8], 1379-81