Deep levels in 1.05eV Sn-doped n-type In0.075Ga0.925As0.975N0.025, lattice-matched to GaAs, were investigated. The samples were grown by metal–organic chemical vapor deposition. Capacitance–voltage measurements were used to determine the electron concentration in both as-grown and post-growth annealed samples, and a decrease in net electron concentration of about 1.5 x 1017/cm3 was observed following annealing. Deep level transient spectroscopy measurements were consistent with the presence of four majority-carrier electron traps, E1 (a broad distribution extending from the conduction band edge to approximately EC - 0.2eV), E2 (0.36eV), E3 (0.34eV), and E4 (0.82eV), as well as one minority-carrier hole trap, H1 (0.71eV), in the present material. It was shown that E2 and H1, both of which were present in the annealed material only, were likely the same defect observed under conditions of electron and hole emission, respectively. Current–voltage-temperature measurements indicate a thermal activation energy of 0.35eV for reverse bias current transport, which was in close agreement with the activation energy of E2. It was thus demonstrated that the E2/H1 defect was a recombination–generation center which contributes to current transport in the InGaAsN-based test diode.

Deep Levels and their Impact on Generation Current in Sn-Doped InGaAsN. R.J.Kaplar, A.R.Arehart, S.A.Ringel, A.A.Allerman, R.M.Sieg, S.R.Kurtz: Journal of Applied Physics, 2001, 90[7], 3405-8