Photoluminescence and photo induced current transient spectroscopy were used to study deep levels in semi-insulating InP prepared by annealing undoped InP in pure and iron phosphide ambients. Defects were much fewer for phosphide ambients than for pure ambients. Deep-level-related photoluminescence emission could only be detected in phosphide-ambient material. The results indicated that Fe diffusion inhibited the thermal formation of a number of defects in annealed InP. A complex defect was formed in the annealing process in the presence of Fe.

Fe-Diffusion-Induced Defects in InP Annealed in Iron Phosphide Ambient. Y.Zhao, H.W.Dong, J.Jiao, J.Zhao, L.Lin: Japanese Journal of Applied Physics - 1, 2002, 41[4A], 1929-31