The influence of dopant impurity type on the dislocation mobility in InP crystals was investigated. It was shown that the dislocation mobility under the action of a concentrated load depended upon the impurity type and the deformation temperature. The critical temperature for dislocation activation in pure and Fe-doped InP was close to 600K. The donor impurity (Sn) displaced the critical temperature for dislocation activation towards low temperatures (about 550K) and increased the dislocation mobility parameters. An acceptor impurity led to an increase in the critical temperature for dislocation activation (>800K) and decreases the dislocation mobility values. The nature of this phenomenon consisted of a change of the lattice parameter of the InP crystals; with the lattice parameter being increased by doping with a donor impurity and decreased by acceptor doping. The deformation (dislocation and twinning) mechanisms were also concerned with the size of the lattice parameter.

Increasing of Dislocation Mobility by Heat Treatment of Deformed Pure and Doped InP Crystals. D.Grabco, N.Palistrant, E.Rusu: Materials Science and Engineering B, 2001, 83[1-3], 13-8